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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

Name: 4 Silicon On Sapphire Wafers Production Prime Grade 4H NDoped SiC Wafers
Brand: ZMKJ
Price: 600 USD

Quality 4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers for sale

Brand Name : ZMKJ

Model Number : 4inch P-grade

Place of Origin : CHINA

MOQ : 1pcs

Price : 600-1500usd/pcs by FOB

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-50pcs/month

Delivery Time : 1-6weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4H-N type

Grade : Dummy / research /Production grade

Thicnkss : 350um or 500um

Suraface : CMP/MP

Application : device maker polishing test

Diameter : 100±0.3mm

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4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers

About Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade		Zero MPD Production Grade (Z Grade)	Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter		99.5-100 mm
Thickness	4H-N	350 μm±25μm
	4H-SI	500 μm±25μm
Wafer Orientation		Off axis : 4.0°toward< 1120 > ±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI
Micropipe Density	4H-N	≤0.5cm-2	≤2 cm-2	≤15 cm-2
	4H-SI	≤1cm-2	≤5 cm-2	≤15 cm-2
Resistivity	4H-N	0.015~0.025 Ω·cm		0.015~0.028 Ω·cm
	4H-SI	≥1E7 Ω·cm		≥1E5 Ω·cm
Primary Flat		{10-10}±5.0°
Primary Flat Length		32.5 mm±2.0 mm
Secondary Flat Length		18.0mm±2.0 mm
Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion		2 mm
LTV/TTV/Bow /Warp		≤4μm/≤10μm /≤25μm /≤35μm		≤10μm/≤15μm /≤25μm /≤40μm
Roughness		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
Cracks by high intensity light		None		Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light		Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas by high intensity light		None		Cumulative area ≤3%
Visual Carbon Inclusions		Cumulative area ≤0.05%		Cumulative area ≤3%
Scratches by high intensity light		None		Cumulative length≤1×wafer diameter
Edge chip		None		5 allowed, ≤1 mm each
Contamination by high intensity light		None
Packaging		Multi-wafer Cassette Or Single Wafer Container

Notes:
* Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

About SiC Substrates Applications

CATALOGUE COMMON SIZE

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

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During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.

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4'' Silicon On Sapphire Wafers Production Prime Grade 4H N-Doped SiC Wafers

Key words: sic wafer ,silicon carbide wafer , prime grade dummy grade

Product Tags:

silicon carbide substrate

sic wafer

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